All existing transistors are based on junctions - obtained by changing the polarity of silicon from positive to negative. Researchers have now demonstrated a new type of transistor in which there are no junctions and no doping concentration gradients. The key to fabricating a junctionless gated resistor is the formation of a semiconductor layer that is thin and narrow enough to allow for full depletion of carriers when the device is turned off - something that was achieved by fabricating silicon nanowires with a diameter of a few dozens of atomic planes. The electrical current flows in this silicon nanowire, and the flow of current is perfectly controlled by a ring structure that electrically squeezes the silicon wire in the same way that you might stop the flow of water in a hose by squeezing it.