So far, there have been no research reports on a graphene-based transistor amplifier and investigations of its in-field controllability for analog, mixed-signal, and radio-frequency applications. Previous work on graphene transistors has largely focused on frequency multiplication near the Dirac point in graphene current-voltage characteristic. But now, a team of researchers has demonstrated the first triple-mode graphene amplifier. They have shown experimentally that by leveraging the ambipolarity of charge transport in graphene, the amplifier can be configured in the common-source, common-drain, or frequency multiplication mode of operation by changing the gate bias. This is the first demonstration of a single-transistor amplifier that can be tuned between different modes of operation using a single three-terminal transistor. Moreover, during its operation, the graphene amplifier was configured in-field to switch between the different modes. The result marks another important step toward graphene applications in electronics.