When top-down meets bottom-up: EUV and X-ray interference lithography for sub-20-nm features

After achieving the 45-nm process, today's semiconductor industry is nearing the 20-nm process and looking for techniques that would enable sub-22-nm-half-pitch line patterns. Following the continuous increase in exposure tool numerical aperture, researchers are pursuing reductions in exposure wavelengths. This effort had them look at extreme ultraviolet (EUV: 13.4 nm in wavelength) as an exposure light source. Unlike the numerical aperture engineering, change of a light source to EUV demands development of its related components, such as photoresist and optics. Until a reliable solution for EUV lithography is developed, EUV interference lithography (EUVIL) would not solely advance the lithographic technology but would also help to optimize photoresist materials for EUV.

SEMATECH and Lasertec Partner at UAlbany NanoCollege to Develop TSV Solutions for Chip-Stacking Applications

Lasertec Corporation of Japan has joined SEMATECH's 3D Interconnect Program at the College of Nanoscale Science and Engineering (CNSE) of the University at Albany, and will partner with SEMATECH to develop robust, cost-effective process metrology technology solutions for readying high-volume via-mid through-silicon via (TSV) manufacturing.

Novel ion trap with optical fiber could link atoms and light in quantum networks

Physicists at the National Institute of Standards and Technology (NIST) have demonstrated an ion trap with a built-in optical fiber that collects light emitted by single ions (electrically charged atoms), allowing quantum information stored in the ions to be measured. The advance could simplify quantum computer design and serve as a step toward swapping information between matter and light in future quantum networks.