INDEPENDENCE, Mo. Intellectual Property Developers LLC in Independence, Mo., is introducing zinc oxide thin-film transistors technology for radiation-hardened applications in space.<\/p>\n
Called the ZnO Radiation-Hardened Thin-Film Transistors, the patented rad-hard space electronics technology was developed together with Auburn University in Auburn, Ala.<\/p>\n
A thin-film transistor is made up of an annealed layer comprising crystalline zinc oxide, with a passivation layer adjacent to the thin-film transistor. The passivation layer has a thickness and material composition such that when a dose of radiation from a radiation source irradiates the thin-film transistor, a portion of the dose that includes an approximate maximum concentration of the dose is located within the annealed layer.<\/p>\n
Related: Radiation-hardened MOSFET qualified for commercial and military satellites and space power solutions<\/p>\n
The annealed layer has a thickness and threshold displacement energies after it has been annealed such that a difference between a transfer characteristic value of the thin-film transistor before and after the dose is less than a first threshold; and a difference between a transistor output characteristic value of the thin-film before and after the dose is less than a second threshold. The thresholds are based on a desired performance of the thin-film transistor.<\/p>\n
The ZnO technology is radiation-hardened upon irradiation of gamma-ray radiation, and is intended for radiation hard electronics application in space, nuclear power facilities, high-altitude aviation, and other radiation environments.<\/p>\n
ZnO technology offers reduced volume, mass, and power consumption that can operate in extreme temperature ranges.<\/p>\n
Related: Radiation-hardened space electronics enter the multi-core era<\/p>\n
ZnO technology compares favorably to silicon carbide (SiC), gallium nitride. ZnO technology is relatively inexpensive to synthesize device quality materials compared to GaN or SiC, Intellectual Property Developers officials say.<\/p>\n
The company has completed a two-year research project, which shows that ZnO transistors are working well under exposure in difficult radiation situations. A patent for ZnO technology has been approved by the U.S. Patent and Trademark Office in Alexandria, Va.<\/p>\n
For more information contact Vincent Salva, president of Intellectual Property Developers LLC, by email at vpsuss@aol.com<\/a>, or by phone at 816-254-6670.<\/p>\n <\/p>\n Continue reading here: <\/p>\n Zinc oxide thin-film transistors technology introduced for radiation-hardened applications in space - Military & Aerospace Electronics<\/a><\/p>\n","protected":false},"excerpt":{"rendered":" INDEPENDENCE, Mo. Intellectual Property Developers LLC in Independence, Mo., is introducing zinc oxide thin-film transistors technology for radiation-hardened applications in space. Called the ZnO Radiation-Hardened Thin-Film Transistors, the patented rad-hard space electronics technology was developed together with Auburn University in Auburn, Ala. Continue reading