Scientists from the Georgia Institute of Technology have for the first time provided details of their \"confinement controlled sublimation\" technique for growing high-quality layers of epitaxial graphene on silicon carbide wafers. The technique relies on controlling the vapor pressure of gas-phase silicon in the high-temperature furnace used for fabricating the material.<\/p>\n","protected":false},"excerpt":{"rendered":"
Scientists from the Georgia Institute of Technology have for the first time provided details of their \"confinement controlled sublimation\" technique for growing high-quality layers of epitaxial graphene on silicon carbide wafers. The technique relies on controlling the vapor pressure of … Continue reading